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 FFPF08S60SN — STEALTH? II Diode ?2008 Fairchild Semiconductor Corporation FFPF08S60SN Rev. C1 www.fairchildsemi.com 1 FFPF08S60SN 8 A, 600 V, STEALTHTMII Diode ? Stealth Recovery trr = 25 ns (@ IF = 8 A) ? Max Forward Voltage, VF = 3.4 V (@ T C = 25°C) ? 600 V Reverse Voltage and High Reliability Applications ? General Purpose ? SMPS, Power Switching Circuits ? Boost Diode in Continuous Mode Power Factor Corrections The FFPF08S60SN is a STEALTH? II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Absolute Maximum Ratings TC = 25oC unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Unit VRRM Peak Repetitive Reverse Voltage 600 V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current @ TC = 60 oC 8 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 60 A TJ, TSTG Operating and Storage Temperature Range -65 to +150 oC Symbol Parameter Max. Unit RθJC Maximum Thermal Resistance, Junction to Case 6.8 oC/W 1. Cathode 2. Anode 1. Cathode 2. Anode TO-220F-2L ? Avalanche Energy Rated ? RoHS Compliant Description Features Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFPF08S60SNTU FFPF08S60SN TO-220F-2L Tube N/A N/A 50 November 2013 |